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Title :MBE法によるバッファー層(SiC(0001) 6√3x6√3R30°)上へのグラフェン成長
Authors :前田 文彦
高村 真琴
日々野 浩樹
Issue Date :Dec-2018
Abstract :To achieve the high quality graphene by molecular beam epitaxy (MBE), we previously obtained the suggestions that appropriate interaction between growth material and substrate is needed for the epitaxial growth of the graphene although inert surface is favorable for the substrates. Thus, we investigated MBE growth of graphene on the buffer layer (SiC(0001) 6√3x6√3R30°), whose atomic arrangement is the same as the graphene although its interaction is expected to be stronger than that of graphene because some carbon atoms of the buffer layer bond with underlying Si atoms and form electric dipoles by the charge inhomogeneity. Then, we achieved the epitaxial growth of graphene and the mobility value of 194cm2/V•s was obtained. This value is the highest value for the MBE-grown graphene.
Type Local :紀要論文
ISSN :24345725
Publisher :福岡工業大学総合研究機構
Comment :エレクトロニクス研究所(Electronics Research Laboratory)
URI :http://hdl.handle.net/11478/1214
citation :福岡工業大学総合研究機構研究所所報
Citation :福岡工業大学総合研究機構研究所所報 Vol.1 p.7 -11
Appears in Collections:Vol.1

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