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Vol.45.No.2(69) >

 
Title :Disappearance of the Self-Interstitial during Diffusion of the Phosphorus-Self-Interstitial Pair in Silicon on the Basis of One-Bond-Type Migration
Authors :田中 秀司
師岡 正美
吉田 正幸
Issue Date :Feb-2013
Abstract :In the interstitialcy mechanism of diffusion of phosphorus-self-interstitial pairs on the basis of one-bond-type migration,the split-<100> configuration and the bond-centered configuration are repeated. This is studied theoretically using three dimensional schemata. It is found that the self-interstitial disappears in the bond-centered configuration. This finding contrasts with that of Fahey,Griffin, and Plummer,who reported that, probably on the basis of two-bond-type migration, the interstitialcy mechanism will operate only if the diffusing defect, the phosphorusself- interstitial pair, does not dissociate.
Type Local :紀要論文
ISSN :02876620
Publisher :福岡工業大学
URI :http://hdl.handle.net/11478/1271
citation :福岡工業大学研究論集
AN10036974
45
2
47
49
Citation :福岡工業大学研究論集 Vol.45 no.2 p.47 -49
Appears in Collections:Vol.45.No.2(69)

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