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Vol.39.No.1(57) >

 
Title :Distribution of Electrically Active Nickel Atoms in Dislocation-Free N-and P-Type Silicon Crystals Measured by Deep Level Transient Spectroscopy
Authors :田中 秀司
北川 興
Issue Date :30-Sep-2006
Abstract :Distribution profiles of electrically active nickel atoms inn-and p-typc dislocation-free silicon arc measured by means of the deep level transient spectroscopy (DLTS) on Schottky barrier diodes (SBD) fabricated on nickel-doped silicon. The processes of lapping-off the surface. etching, SBD formation and DLTS measurement were repeated on one sample until the total removed-off thickness exceeded the half of the initial sample thickness. The distribution profiles were evaluated by measuring the con­centrations of the clcctron trap (nickel acceptor level) in n-type and the hole trap (nickel donor level) in p-type ,ilicon as functions of入II. where x is the di: ヽtanccfrom the surface and I is the s皿piethick­ness. The distributions manifest U-shaped diffusion profiles irrespective of one-sided or double-sided diffusion conditions. The experimental results have shown. in the bulk, the flat profiles peculiar to those according to the dissociative mechardsm of diffusion in which the sinks and sourees of lattice va­cancics are present in the bulk.
Type Local :紀要論文
ISSN :02876620
Publisher :福岡工業大学
Comment :著者所属 : 田中 秀司 福岡工業大学電子情報工学科(Department of Information Electronics, Faculty of Engineering, Fukuoka Institute of Technology)
URI :http://hdl.handle.net/11478/835
citation :福岡工業大学研究論集
AN10036974
39
1
13
15
Citation :福岡工業大学研究論集 Vol.39 no.1 p.13 -15
Appears in Collections:Vol.39.No.1(57)

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